Speakers

Keynote Speaker 1

Prof. Hongchun Qu, Chongqing University of Posts and Telecommunications, China

Hongchun Qu received the Ph.D. degree in computer science and technology from Chongqing University, Chongqing, China, and Iowa State University, Ames, IA, USA, in 2009.,During 2010 and 2012, he was a Postdoctoral Researcher with the University of Tübingen. Since 2013, he has been a Professor with the College of Automation and College of Computer Science, Chongqing University of Posts and Telecommunications (CQUPT), Chongqing, China, where he also serves as the Director of the Institute of Ecological Safety, Forecasting and Control. His research interests include computer simulation and modeling, machine learning, and data science.

Keynote Speaker 2

Dr. Gao is a professor of Mechanical Engineering at Shandong University(SDU), and deputy director in Institute of Mechanical Design and Theory of SDU. His current research interests include precision wire saw slicing for crystal materials and photovoltaic silicon solar cells; electroplated diamond saw wire preparation; Design and analysis of intelligent equipment.

Title: Finite element simulation on the fracture probability of photovoltaic monocrystalline silicon wafers

Abstract:

Vigorously developing solar photovoltaic power generation is an important measure to achieve the goal of "double carbon". At present, photovoltaic silicon crystal cells are developing towards large size and ultra-thin, and the as-cut wafer breaking in diamond wire slicing is prominent in the manufacturing. Due to the decreasing kerf width, Adjacent silicon wafers will adhere together due to the capillary phenomenon of cutting fluid between the kerf, causing bending stress on the silicon wafers. This report introduces the application of finite element simulation method to calculate the coupled stress of silicon wafer bending stress, sawing thermal stress, and sawing mechanical stress during the sawing process. Furthermore, based on the Weibull probability function, the probability of silicon wafer breakage under maximum coupling stress was predicted.